Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2005-03-22
2009-06-09
Smith, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S387000, C438S299000, C438S478000
Reexamination Certificate
active
07545023
ABSTRACT:
A semiconductor transistor includes a substrate, a gate insulating layer positioned on the surface of the substrate, a gate positioned on the gate insulating layer, a channel region positioned in the substrate corresponding to the gate, and a source region and a drain region respectively positioned alongside the channel region. The source region and the drain region are mainly made of a first material and a second material, wherein the first material and the second material have a same lattice structure and different spacing. The source region and the drain region each include a main region in which a percentage of the second material is constant, and a peripheral region in which a percentage of the second material is graded.
REFERENCES:
patent: 5821577 (1998-10-01), Crabbe' et al.
patent: 6218711 (2001-04-01), Yu
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6509586 (2003-01-01), Awano
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6689671 (2004-02-01), Yu et al.
Hsu Winston
Rodgers Colleen E
Smith Matthew
United Microelectronics Corp.
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