Semiconductor thin films

Details Semiconductor thin films Semiconductor thin films

1987-07-09

1989-08-01

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566162, 15662071, 156DIG73, 156DIG64, 156DIG88, 437247, 437976, C30B 102, C30B 2960

Patent

active

048530760

ABSTRACT:
An improved method and apparatus for optimizing the electrical properties while crystallizing material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and subjected to a heat treatment to intentionally induce thermal stress while crystallizing the material. The heat treatment melts the material being crystallized and when the material solidifies, a built-in stress is retained which, in the case of n-doped Si on fused silica results in a tensile stress which produces an electron mobility in the film of 870 cm.sup.2 /volt-sec as compared to similarly fashioned unstressed n-doped Si on SiO.sub.2 coated Si which has an electron mobility of 500 cm.sup.2 /volt-sec.

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