Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-05-03
2009-12-15
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51001
Reexamination Certificate
active
07633087
ABSTRACT:
A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.
REFERENCES:
patent: 5997958 (1999-12-01), Sato et al.
patent: 2004/0161873 (2004-08-01), Dimitrakopoulos et al.
patent: 2004/0266148 (2004-12-01), Yim et al.
patent: 2005281019 (2005-10-01), None
patent: WO 2004/005587 (2004-01-01), None
Machine Translation of JP 2005-281019.
Chung Young Su
Hyun Sang Heon
Jeong Hyun Dam
Seon Jong Baek
Shin Hyeon Jin
Cantor & Colburn LLP
Ho Anthony
Parker Kenneth A
Samsung Corning Precision Glass Co., Ltd.
LandOfFree
Semiconductor thin film using self-assembled monolayers and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor thin film using self-assembled monolayers and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film using self-assembled monolayers and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4093664