Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1996-03-01
1998-08-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257417, 257418, 257619, 257627, 7351421, 7351422, 7351436, 7351437, 73754, H01L 2982
Patent
active
057930732
ABSTRACT:
A semiconductor thin film sensor device including a semiconductor body formed of silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that the thin film insulation member is bridged across the depression. Preferably, the depth of the depression is over 200 .mu.m. In one embodiment, the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <100> direction of the semiconductor body.
REFERENCES:
patent: 4478077 (1984-10-01), Bohrer et al.
patent: 4682503 (1987-07-01), Higashi et al.
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5155061 (1992-10-01), O'Connor et al.
patent: 5594171 (1997-01-01), Ishida et al.
Kaminishi Morimasa
Satoh Yukito
Yamaguchi Takayuki
Mintel William
Ricoh Co. Ltd.
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