Semiconductor thin film forming method, production methods...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C392S411000, C257SE21475

Reexamination Certificate

active

10182784

ABSTRACT:
An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4649261 (1987-03-01), Sheets
patent: 5073698 (1991-12-01), Stultz
patent: 5079187 (1992-01-01), Asmus et al.
patent: 5174881 (1992-12-01), Iwasaki et al.
patent: 5194401 (1993-03-01), Adams et al.
patent: 5357172 (1994-10-01), Lee et al.
patent: 5577157 (1996-11-01), Sopori
patent: 5627081 (1997-05-01), Tsuo et al.
patent: 5642017 (1997-06-01), Hush
patent: 5698486 (1997-12-01), Fung et al.
patent: 5753542 (1998-05-01), Yamazaki et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5814835 (1998-09-01), Makita et al.
patent: 5827773 (1998-10-01), Voutsas
patent: 5962869 (1999-10-01), Yamazaki et al.
patent: 6074901 (2000-06-01), Ohtani et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 57-068014 (1982-04-01), None
patent: 57-183020 (1982-11-01), None
patent: 60-102728 (1985-06-01), None
patent: 62-035512 (1987-02-01), None
patent: 63-271922 (1988-11-01), None
patent: 63-278217 (1988-11-01), None
patent: 2-275622 (1990-11-01), None
patent: 02-283036 (1990-11-01), None
patent: 5-094995 (1993-04-01), None
patent: 5-218367 (1993-08-01), None
patent: 5-291294 (1993-11-01), None
patent: 5299339 (1993-11-01), None
patent: 7-078759 (1995-03-01), None
patent: 7-106247 (1995-04-01), None
patent: 7-211636 (1995-08-01), None
patent: 7-226374 (1995-08-01), None
patent: 7-297122 (1995-11-01), None
patent: 7307286 (1995-11-01), None
patent: 8-195494 (1996-07-01), None
patent: 2000-311857 (2000-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor thin film forming method, production methods... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor thin film forming method, production methods..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film forming method, production methods... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3819980

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.