Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-05-05
1997-07-08
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257352, 257432, 257506, 257752, H01L 2701, H01L 31032, H01L 2900, H01L 2348
Patent
active
056464320
ABSTRACT:
A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
REFERENCES:
patent: 4875086 (1989-10-01), Malhi et al.
patent: 4888304 (1989-12-01), Nakagawa et al.
patent: 4890156 (1989-12-01), Drye et al.
patent: 5173753 (1992-12-01), Wu
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5233211 (1993-08-01), Hayashi et al.
patent: 5334859 (1994-08-01), Matsuda
patent: 5347154 (1994-09-01), Takahashi et al.
Iwaki Tadao
Matsushita Katsuki
Senbonmatsu Shigeru
Takano Ryuichi
Yamazaki Tsuneo
Crane Sara W.
Martin Wallace Valencia
Seiko Instruments Inc.
LandOfFree
Semiconductor thin film formed on a supporting substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor thin film formed on a supporting substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film formed on a supporting substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2410153