Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-12-18
2007-12-18
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21134
Reexamination Certificate
active
11093845
ABSTRACT:
The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin film14over a substrate10;the step of forming band-shaped portion16for blocking crystal growth of the semiconductor thin film in the semiconductor film or over the semiconductor film; and the step of causing an energy beam18of a continuous wave to scan in a direction intersecting the longitudinal direction of the portion for blocking crystal growth. The energy beam is caused to scan, intersecting the portion for blocking the crystal growth, whereby the crystal growth can be interrupted when the application region of the energy beam intersects the portions for blocking the crystal growth. Even when a solid semiconductor thin film which is not patterned in islands is crystallized, the semiconductor thin film of good crystals can be formed with high yields while the film is prevented from peeling.
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Dolan Jennifer M
Greer Burns & Crain Ltd.
Lebentritt Michael
Sharp Kabushiki Kaisha
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