Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-03-15
2011-03-15
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C438S658000, C257SE29289
Reexamination Certificate
active
07906777
ABSTRACT:
The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10+17cm−3or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film40.
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Toshihiro Moriga et al, “Transparent conducting amorphous Zn-Sn-O films deposited by simultaneous dc sputtering”, J. Vac. SCI. Technology, 2004, vol. 22, No. 4, pp. 1705-1710.
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Li, Guiliang (patent agent). “First Office Action.” (State Intellectual Property Office of People's Republic of China.) Jul. 17, 2009, Application No. 200680042994.7, Applicant: Idemitsu Kosan Co., Ltd. Title of Invention: Semiconductor Thin Film and Method for Manufacturing Same, and Thin Film Transistor.
Moriga, Toshihiro et al. “Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous Dc Sputtering.” Journal of Vacuum Science & Technology A vol. 22, No. 4 (2004): 1705-1710.
Inoue Kazuyoshi
Tanaka Nobuo
Tanaka, legal representative Tokie
Yano Koki
Idemitsu Kosan Co. Ltd.
Millen White Zelano & Branigan P.C.
Monbleau Davienne
Reames Matthew
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