Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2007-02-13
2007-02-13
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S528000, C257S516000, C257S532000, C257S723000, C257S724000, C257S774000
Reexamination Certificate
active
10092525
ABSTRACT:
A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.
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Japanese Office Action dated May 22, 2006 of corresponding Japanese Application No. 2001-329687.
Imanaka Yoshihiko
Okamoto Keishiro
Omote Koji
Shioga Takeshi
Taniguchi Osamu
Fujitsu Limited
Gebremariam Samuel A
Owens Douglas W.
Westerman, Hattori, Daniels & Adrian , LLP.
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