Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1995-05-26
2000-08-08
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257335, 257378, H01L 2930, H01L 2976
Patent
active
061005754
ABSTRACT:
A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetrmined distribution of the carrier life time. Thus, turn OFF characteristics of a semiconductor switching device can be improved without causing any unacceptable disadvantages for other characteristics.
REFERENCES:
patent: 4620211 (1986-10-01), Baliga et al.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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