Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-06-28
2008-09-16
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S638000
Reexamination Certificate
active
07425507
ABSTRACT:
Methods for forming a via and a conductive path are disclosed. The methods include forming a via within a wafer with cyclic etch/polymer phases, followed by an augmented etch phase. The resulting via may include a first portion having a substantially uniform cross section and a second portion in the form of a hollow ball, extending laterally further within the wafer than the first portion. Back-grinding the wafer to the second portion of the via may create a vent. A conductive path may be formed by filling the via with a conductive material, such as solder. Flux gases may escape through the vent. The wafer surrounding the second portion of the via may be removed, exposing a conductive element in the shape of a ball, the shape of the second portion of the via. Semiconductor devices including the conductive paths of the present invention are also disclosed.
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