Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-09-09
2008-09-09
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S409000, C438S455000, C438S458000, C438S464000
Reexamination Certificate
active
11402052
ABSTRACT:
Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
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Ghyselen Bruno
Letertre Fabrice
Lee Hsien-ming
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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