Semiconductor substrate with trenches for reducing substrate...

Details Semiconductor substrate with trenches for reducing substrate... Semiconductor substrate with trenches for reducing substrate...

2005-02-22

2005-02-22

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C439S135000, C439S459000

Reexamination Certificate

active

06858471

ABSTRACT:
In one embodiment of the present invention, a method for fabricating semiconductor devices comprises forming an active region about a front-side of a substrate. A plurality of trenches are then formed about a back-side of the substrate. A grid of banks separates the trenches. A conductive material is then applied to the back-side of the substrate. The trenches and the conductive material act to reduce the on-state resistance of the substrate and enhance thermal conductivity, while the grid of banks maintains the structural strength of the wafer.

REFERENCES:
patent: 4224734 (1980-09-01), Tiefert et al.
patent: 5145810 (1992-09-01), Matsumi
patent: 5344789 (1994-09-01), Terashima
patent: 6642126 (2003-11-01), Igel

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