SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND...

Details SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND... SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND...

2005-01-04

2005-01-04

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S135000, C438S143000, C438S151000, C438S310000, C438S407000, C438S471000, C438S543000, C438S514000, C257S119000, C257S124000, C257S133000, C257S138000, C257S153000, C257S337000

Reexamination Certificate

active

06838321

ABSTRACT:
An N−-type silicon substrate (1) has a bottom surface and an upper surface which are opposed to each other. In the bottom surface of the N−-type silicon substrate (1), a P-type impurity diffusion layer (3) of high concentration is entirely formed by diffusing a P-type impurity. In the upper surface of the N−-type silicon substrate (1), a P-type isolation region (2) is partially formed by diffusing a P-type impurity. The P-type isolation region (2) has a bottom surface reaching an upper surface of the P-type impurity diffusion layer (3). As viewed from the upper surface side of the N−-type silicon substrate (1), the P-type isolation region (2) is formed, surrounding an N−region (1a) which is part of the N−-type silicon substrate (1). The N−region (1a) surrounded by the P-type isolation region (2) is defined as an element formation region of the N−-type silicon substrate (1). Thus obtained are a semiconductor device and a method of manufacturing the same, and a semiconductor substrate and a method of manufacturing the same, which make it possible to retain bidirectional breakdown voltages and ensure high reliability.

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