Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-29
2008-10-28
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S405000, C438S050000
Reexamination Certificate
active
07442999
ABSTRACT:
A semiconductor substrate includes: a semiconductor crystal layer grown on one face of a substrate; and a stress relaxation layer, which is formed on the other face opposite to the one face and the side face of the substrate and applies stress to the substrate in the same direction as the direction of stress which the semiconductor crystal layer applies to the substrate. In this case, stress of the semiconductor crystal layer to the substrate is offset. Therefore, warp of the semiconductor substrate and generation of cracks are inhibited.
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patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6770504 (2004-08-01), Horning et al.
patent: 2006/0024512 (2006-02-01), Kishimoto et al.
patent: 2003-113000 (2003-04-01), None
Komatani Tsutomu
Kurachi Shunsuke
Dang Phuc T
Eudyna Devices In.
Westerman, Hattori, Daniels & Adrian , LLP.
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