Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-13
2007-11-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000, C117S008000, C257SE21133
Reexamination Certificate
active
11393213
ABSTRACT:
A method of manufacturing a semiconductor device, includes: forming an insulating layer on a single crystal semiconductor substrate; forming a non-crystalline semiconductor layer on the insulating layer; forming an insulating film on the non-crystalline semiconductor layer; forming an opening section for exposing a part of a surface of the single crystal semiconductor substrate through the insulating film, the non-crystalline semiconductor layer and the insulating layer; forming a single crystal semiconductor layer embedded in the opening section so as to have contact with the non-crystalline semiconductor layer; removing the insulating film and the insulating layer while the single crystal semiconductor layer supporting the non-crystalline semiconductor layer above the single crystal semiconductor substrate; forming a single-crystallized semiconductor layer obtained by single-crystallizing the non-crystalline semiconductor layer using the single crystal semiconductor layer as a seed by providing a thermal treatment on the non-crystalline semiconductor layer from which the insulating film and the insulating layer are removed; filling a gap between the single-crystallized semiconductor layer and the single crystal semiconductor substrate with an embedded insulating layer; forming a gate electrode on the single-crystallized semiconductor layer; and forming in the single-crystallized semiconductor layer a source layer disposed on one side of the gate electrode and a drain layer disposed on the other side of the gate electrode.
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patent: 6919238 (2005-07-01), Bohr
patent: 2003/0113961 (2003-06-01), Horiuchi et al.
patent: 2004/0048454 (2004-03-01), Sakaguchi
patent: 09-266170 (1997-10-01), None
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patent: 2002-299591 (2002-10-01), None
Edwards Angell Palmer & & Dodge LLP
Fourson George
Parker John M.
Penny, Jr. John J.
Seiko Epson Corporation
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