Semiconductor substrate, semiconductor device, method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S353000, C257S507000, C257SE27112

Reexamination Certificate

active

07956414

ABSTRACT:
A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.

REFERENCES:
patent: 7008847 (2006-03-01), Park
patent: 7332399 (2008-02-01), Kato
patent: 7344997 (2008-03-01), Kato
patent: 2002/0076899 (2002-06-01), Skotnicki et al.
patent: 2002/0088971 (2002-07-01), Tezuka et al.
patent: 2007/0126034 (2007-06-01), Sakai et al.
patent: 2007/0184588 (2007-08-01), Furukawa et al.
patent: 2008/0122024 (2008-05-01), Kato
patent: 07-211917 (1995-08-01), None
patent: 2001-102442 (2001-04-01), None
patent: 2002-299591 (2002-10-01), None
patent: 2003-158091 (2003-05-01), None
patent: 2003-218232 (2003-07-01), None
patent: 2005322830 (2005-11-01), None
patent: 2005354024 (2005-12-01), None
patent: 2006-041417 (2006-02-01), None
patent: 2006041331 (2006-02-01), None
patent: 1998-069868 (1998-10-01), None
patent: WO-2004/044975 (2004-05-01), None
patent: WO-2005036638 (2005-04-01), None

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