Semiconductor substrate, process for production thereof, and sem

Details Semiconductor substrate, process for production thereof, and sem Semiconductor substrate, process for production thereof, and sem

1997-06-13

1999-01-12

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438407, H01L 2176

Patent

active

058588558

ABSTRACT:
The present invention relates to a semiconductor substrate which is a composite substrate obtained by (1) forming, on one side of a first single-crystal silicon substrate of first conductivity and low impurity content, a polycrystalline silicon layer of first conductivity and higher impurity content than the impurity content of the first single-crystal silicon substrate, which layer later becomes a life-time killer of a second-conductivity carrier, (2) bonding, on the polycrystalline silicon layer, a second single-crystal silicon substrate of second conductivity and high impurity content, and (3) subjecting the resulting bonded wafer to a heat treatment, as well as to a process for production of the semiconductor substrate. The present invention relates particularly to a semiconductor substrate useful for formation of a vertical power semiconductor device and a process for production of the semiconductor substrate. The present invention relates also to a semiconductor device obtained using the above semiconductor substrate.

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Furukawa et al, "Applications of the Silicon Wafer Direct-Bonding Technique to Electron Devices", Applied Surface Science, vol. 41/42, pp. 627-632, 1989.
Nakagawa, et al. "Bipolar-Mode MOSFETs Fabricated By Silicon-Wafer Direct Bonding", Toshiba Review, vol. 41, No. 12, pp. 1000-1003 (1986).

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