Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-04-17
2007-04-17
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
10952655
ABSTRACT:
According to one aspect of the present invention, a method of electrochemically polishing a semiconductor substrate may be provided. A semiconductor substrate processing fluid, having a plurality of abrasive particles therein, may be placed between the surface of the semiconductor substrate and the polish head. The polish head may be moved relative to the surface of the semiconductor substrate to cause the abrasive particles to polish the surface of the semiconductor substrate. According to a second aspect of the present invention, a method for electro-polishing a semiconductor substrate may be provided. A semiconductor substrate may be placed in an electrolytic solution. A surface of the semiconductor substrate may be contacted with at least one conductive member. A voltage may be applied across the electrolytic solution and the at least one conductive member. The at least one conductive member may be moved across the surface of the semiconductor substrate.
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Landolt, D., Review Article: Fundamental Aspects Of Electropolishing, Electrochimica Acta, The Journal Of The International Society Of Electrochemistry, vol. 32, no date.
No. 1, Jan. 1987, pp. 1-11, Pergamon Journals Ltd., Printed in Great Britain.
Barns Chris E.
Fischer Paul B.
Blakely , Sokoloff, Taylor & Zafman LLP
Deo Duy-Vu N
Intel Corporation
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