Semiconductor substrate, method of manufacturing the same,...

Details Semiconductor substrate, method of manufacturing the same,... Semiconductor substrate, method of manufacturing the same,...

2007-11-13

2007-11-13

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257SE33005, C257SE21090

Reexamination Certificate

active

11282784

ABSTRACT:
A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal silicon layer which is not covered with the insulator, and to cover an edge portion of the insulator adjacent to the region, and a non-single crystal silicon layer formed on the insulator, the interface between the non-single crystal silicon layer and the second single crystal silicon layer being positioned on the insulator.

REFERENCES:
patent: 5740099 (1998-04-01), Tanigawa
patent: 5856696 (1999-01-01), Blanchard
patent: 6333532 (2001-12-01), Davari et al.
patent: 6420764 (2002-07-01), Blanchard
patent: 6531754 (2003-03-01), Nagano et al.
patent: 6630714 (2003-10-01), Sato et al.
patent: 5-75053 (1993-03-01), None
patent: 8-222625 (1996-08-01), None
patent: 11-17001 (1999-01-01), None
patent: 2000-223679 (2000-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor substrate, method of manufacturing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor substrate, method of manufacturing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate, method of manufacturing the same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3873127