Semiconductor substrate, method of fabricating the same,...

Details Semiconductor substrate, method of fabricating the same,... Semiconductor substrate, method of fabricating the same,...

2011-05-10

2011-05-10

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S144000, C257SE27130, C257SE27150

Reexamination Certificate

active

07939358

ABSTRACT:
In an example embodiment, an image sensor includes a semiconductor layer and isolation regions disposed in the semiconductor layer. The isolation regions define active regions of the semiconductor layer. The image sensor further includes photoelectric converters disposed in the semiconductor layer and at least one wiring layer disposed over a top surface of the semiconductor layer. The image sensor also includes color filters disposed below a bottom surface of the semiconductor layer and lenses disposed below the color filters. Each lens is arranged to concentrate incoming light into an area spanned by a corresponding photoelectric converter.

REFERENCES:
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patent: 2006/0252187 (2006-11-01), Ramaswamy et al.
patent: 2007/0184571 (2007-08-01), Yang
patent: 2008/0014726 (2008-01-01), Cha et al.
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English language abstract of Japanese Publication No. 2005-142221.
English language abstract of Japanese Publication No. 2006-019360.
English language abstract of Japanese Publication No. 2006-128392.

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