Semiconductor substrate having a gettering layer

Details Semiconductor substrate having a gettering layer Semiconductor substrate having a gettering layer

1992-09-30

1994-07-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257611, 257617, 257913, 437 10, 437 12, H01L 21322, H01L 2138, H01L 2934, H01L 2936

Patent

active

053270070

ABSTRACT:
A silicon wafer having a low concentration of oxygen and a silicon wafer having a high concentration of oxygen are joined and polished to prescribed thicknesses to form a semiconductor substrate according to the present invention. A region formed of the wafer having a low concentration of oxygen is used as a region where an element is formed, and a region formed of the wafer having a high concentration of oxygen produces a gettering effect on metal impurities and defects. As a DZ layer having a low concentration of oxygen, a wafer manufactured by an MCZ method or a wafer manufactured by a CZ method is used after being heat-treated at high temperature to diffuse oxygen outward. In another example, a damage layer, a polycrystalline silicon layer, an amorphous silicon layer or the like is formed between a DZ layer and an IG layer.

REFERENCES:
patent: 4649408 (1987-03-01), Sekine et al.
patent: 5194395 (1993-03-01), Wada
patent: 5220191 (1993-06-01), Matsushita

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