Semiconductor substrate having a gettering layer

Details Semiconductor substrate having a gettering layer Semiconductor substrate having a gettering layer

1994-05-25

1996-07-23

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257166, 257913, 437 10, 437 12, H01L 21322, H01L 2138

Patent

active

055392458

ABSTRACT:
A silicon wafer having a low concentration of carbon and a silicon wafer having a high concentration of carbon are joined and polished to prescribed thicknesses to form a semiconductor substrate according to the present invention.

REFERENCES:
patent: 4575466 (1986-03-01), Iwai et al.
patent: 4649408 (1987-03-01), Sekine et al.
patent: 4885257 (1989-12-01), Matsushita
patent: 5194395 (1993-03-01), Wada
patent: 5220191 (1993-06-01), Matsushita
Translations of Japan Kokai Publications #03-184345 (Aug. 1991), #62-235741 (Oct. 1987) & #59-082717 (May 1984).

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