Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group ii-vi compound
Reexamination Certificate
2011-01-25
2011-01-25
Vanoy, Timothy C (Department: 1793)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group ii-vi compound
C423S508000, C423S509000, C117S956000, C117S957000
Reexamination Certificate
active
07875957
ABSTRACT:
Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.
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Hirano Ryuichi
Kurita Hideki
Suzuki Kenji
Birch & Stewart Kolasch & Birch, LLP
Nippon Mining & Metals Co., Ltd.
Vanoy Timothy C
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