Semiconductor substrate for epitaxial growth and...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group ii-vi compound

Reexamination Certificate

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C423S508000, C423S509000, C117S956000, C117S957000

Reexamination Certificate

active

07875957

ABSTRACT:
Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

REFERENCES:
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patent: 6-92278 (1994-11-01), None
patent: 6-345598 (1994-12-01), None
patent: WO-2005/112106 (2005-11-01), None
Erné et al., “Surface films on HgCdTe and CdTe etched in ferricyanide solution” Applied Surface Science, May 15, 2001, vols. 175-176, pp. 579-584, paragraphs of “1. Introduction”, “4. Discussion”.

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