Semiconductor substrate, electronic device, optical device,...

Details Semiconductor substrate, electronic device, optical device,... Semiconductor substrate, electronic device, optical device,...

2007-03-15

2011-12-27

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S047000, C257S098000, C257S192000, C257S615000, C257SE29089, C257SE31019, C257SE33023

Reexamination Certificate

active

08084281

ABSTRACT:
The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

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Chinese Office Action dated Feb. 10, 2011, with English translation.
Taiwanese Notification of Examination dated Jan. 10, 2011, with English translation.
PCT/IB/326.
PCT/IB/373.
PCT/ISA/237.

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