Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-03-15
2011-12-27
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000, C438S047000, C257S098000, C257S192000, C257S615000, C257SE29089, C257SE31019, C257SE33023
Reexamination Certificate
active
08084281
ABSTRACT:
The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
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Chinese Office Action dated Feb. 10, 2011, with English translation.
Taiwanese Notification of Examination dated Jan. 10, 2011, with English translation.
PCT/IB/326.
PCT/IB/373.
PCT/ISA/237.
Hirata Koji
Imai Katsuhiro
Iwai Makoto
Kawamura Fumio
Mori Yusuke
Huynh Andy
McGinn IP Law Group PLLC
NGK Insulators Ltd.
Osaka University
Toyoda Gosei Co,., Ltd.
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