Semiconductor substrate containing bulk micro-defect

Details Semiconductor substrate containing bulk micro-defect Semiconductor substrate containing bulk micro-defect

1995-05-19

1996-03-26

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

257610, 257611, H01L 2930, H01L 29167

Patent

active

055023312

ABSTRACT:
The semiconductor substrate is manufactured by growing a semiconductor crystal in accordance with CZ method; forming a substrate from the semiconductor crystal; and heat treating the formed substrate at 1150.degree. C. or higher for 30 min or longer in non-oxidizing atmosphere (e.g., 1200.degree. C. for 1 hour in hydrogen gas). In the formed wafer, the density of bulk micro-defects is 5.times.10.sup.2 to 5.times.10.sup.6 pieces per cm.sup.-3 in the surface area, but 5.times.10.sup.7 pieces per cm.sup.-3 or more in an 20 .mu.m or deeper from the surface. To confirm the depth profile of BMD density, the substrate is further heat treated at 780.degree. C. for 3 hours in oxygen atmosphere and successively at 1000.degree. C. for 16 hours in oxygen atmosphere.

REFERENCES:
patent: 4548654 (1985-10-01), Tobin
patent: 4597804 (1986-07-01), Imaoka
patent: 4622082 (1986-11-01), Dyson et al.
patent: 4637123 (1987-01-01), Cazcarra et al.
patent: 5066359 (1991-11-01), Chiou
Wolf et al. "Silicon Processing For VLSI Era," Lattice Press, Sunset Beach, Calif., 1986, pp. 30-33.
Y. Matsushita, et al; "Improvement of Silicon Surface Quality by H.sub.2 Anneal"; Extended Abstract of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986; pp. 529-532.

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