Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-11-27
2007-11-27
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C438S018000
Reexamination Certificate
active
10995539
ABSTRACT:
The semiconductor substrate comprises a first monitor part14aformed in a first region near a center of a semiconductor wafer10, which includes a first element having a first electrode24formed over the semiconductor wafer10with a first insulation film22formed therebetween, and a first electrode pad32electrically connected to the first electrode24; and a second monitor part14bformed in a second region different from the first region, which includes a second element having a second electrode24formed on the semiconductor wafer10with a second insulation film22formed therebetween, and a second electrode pad32electrically connected to the second electrode24. When electric breakdown has taken place in both the first monitor part14aand the second monitor part14b, it can be judged that too large static electricity was generated upon the release of the surface protection film39. When electric breakdown has taken place in either of the first monitor part14aand the second monitor part14b, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has taken place in neither of the first monitor part14aand the second monitor part14b, it can be judged that too large static electricity was generated upon the release of the surface protection film39. Thus, factors for defects of semiconductor devices can be identified, which leads to improved quality of the semiconductor devices.
REFERENCES:
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Ninomiya Masahiro
Ohta Hiroshi
Tone Sachie
Menz Douglas M.
Westerman, Hattori, Daniels & Adrian , LLP.
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