Semiconductor substrate, and semiconductor device and method...

Details Semiconductor substrate, and semiconductor device and method... Semiconductor substrate, and semiconductor device and method...

2007-05-02

2010-10-05

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S419000

Reexamination Certificate

active

07808059

ABSTRACT:
In a semiconductor substrate1, a plurality of semiconductor elements2having diaphragm structures are formed in the form of cells in the longitudinal direction and the lateral direction, and V-grooves3are formed by anisotropic etching continuously on only division lines4parallel formed in one direction, out of the division lines4which are orthogonal to each other and divide the respective semiconductor elements2individually.

REFERENCES:
patent: 5314844 (1994-05-01), Imamura
patent: 7211526 (2007-05-01), Iri et al.
patent: 7468310 (2008-12-01), Yamazaki et al.
patent: 05-285935 (1993-11-01), None
patent: 2001-127008 (2001-05-01), None
patent: 3408805 (2003-03-01), None
patent: 2004-363517 (2004-12-01), None
patent: 2005-116844 (2005-04-01), None

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