Semiconductor substrate and processes therefor

Details Semiconductor substrate and processes therefor Semiconductor substrate and processes therefor

2006-12-05

2006-12-05

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S311000

Reexamination Certificate

active

07144818

ABSTRACT:
A method of manufacturing an integrated circuit (IC) can utilizes semiconductor substrate configured in accordance with a trench process. The substrate utilizes trenches in a base layer to induce stress in a layer. The substrate can include silicon. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.

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International Search Report for Application No. PCT/US2004/035417, mailed Apr. 12, 2005, 4 pages.

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