Semiconductor substrate and method of processing the same

Details Semiconductor substrate and method of processing the same Semiconductor substrate and method of processing the same

1996-01-04

1999-03-23

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438799, H01L 21324, H01L 21477

Patent

active

058859055

ABSTRACT:
A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before said heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree.0 C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.

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