Semiconductor substrate and method of fabricating semiconductor

Details Semiconductor substrate and method of fabricating semiconductor Semiconductor substrate and method of fabricating semiconductor

1998-04-07

2000-11-21

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257352, 257354, 438149, H01L 2701

Patent

active

061506966

ABSTRACT:
A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.

REFERENCES:
patent: 4700461 (1987-10-01), Choi et al.
patent: 5116771 (1992-05-01), Karulkar
patent: 5597410 (1997-01-01), Yen
patent: 5834812 (1998-11-01), Golland et al.

Affiliated with

Also associated with

Rating

Semiconductor substrate and method of fabricating semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor substrate and method of fabricating semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate and method of fabricating semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1259944