Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-02
2011-08-02
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S164000, C438S455000
Reexamination Certificate
active
07989273
ABSTRACT:
To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4and N2O as source gases is in contact with the single-crystal semiconductor layer.
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European Search Report (Application No. 08009856.9) Dated Jun. 17, 2010.
Furuno Makoto
Ichijo Mitsuhiro
Ohtsuki Takashi
Okazaki Kenichi
Tanaka Tetsuhiro
Lee Eugene
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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