Semiconductor substrate and a manufacturing method thereof

Details Semiconductor substrate and a manufacturing method thereof Semiconductor substrate and a manufacturing method thereof

1979-02-06

1981-06-30

Robinson, Ellis P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148 15, 156636, 428409, 428446, H01L 21304

Patent

active

042761140

ABSTRACT:
This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.

REFERENCES:
patent: 3009841 (1961-11-01), Faust
patent: 3041226 (1962-06-01), Pennington
patent: 3128213 (1964-04-01), Gault
patent: 3266961 (1966-08-01), Emels
patent: 3342652 (1967-09-01), Reisman
patent: 3436286 (1969-04-01), Lange
patent: 3615955 (1971-10-01), Regh
patent: 3888053 (1975-06-01), White
patent: 3923567 (1975-12-01), Lawrence
patent: 4144099 (1979-03-01), Edmonds

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