Semiconductor structures which incorporate thin film transistors

Details Semiconductor structures which incorporate thin film transistors Semiconductor structures which incorporate thin film transistors

1996-09-19

1998-04-28

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

H01L 2100

Patent

active

057443840

ABSTRACT:
Improved field effect transistor (FET) structures are described. They include a thin film transistor (TFT), wherein a contact layer directly connects a diffusion region of the TFT to an active site of another device, e.g., another transistor. This invention is especially suitable for TFT's which are built on one or more conductive studs. Static random access memory (SRAM) cells incorporating one or more of the TFT's are also described.
Moreover, this invention is directed to methods for preventing or alleviating the problems associated with gouging during formation of contact layers.

REFERENCES:
patent: 5100817 (1992-03-01), Cederbaum
patent: 5272099 (1993-12-01), Chou et al.
patent: 5278459 (1994-01-01), Matsui et al.
patent: 5319240 (1994-06-01), Faure et al.
patent: 5334862 (1994-08-01), Manning et al.
patent: 5410174 (1995-04-01), Kalnitsky

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