Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S499000, C257S724000, C257SE21010
Reexamination Certificate
active
07994550
ABSTRACT:
A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed layer is electrically insulated from the second portion of the seed layer. A first semiconductor device is formed in the elemental semiconductor layer. A second semiconductor device is formed in the compound semiconductor layer. The second semiconductor device includes: a first electrode in contact with a first region of the compound semiconductor layer; a second electrode in contact with a second region of the compound semiconductor layer; and a third electrode. The third electrode controls carriers passing in a third region of the compound semiconductor layer disposed between the first region and the second region. A fourth electrode is in electrical contact with the second portion of the seed layer.
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Bettencourt John P.
Kaper Valery S.
LaRoche Jeffrey R.
Tabatabaie Kamal
Daly, Crowley & Mofford & Durkee, LLP
Pert Evan
Raytheon Company
Wilson Scott
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