Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-25
2006-04-25
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S312000, C257S314000, C257S315000, C438S257000, C438S593000
Reexamination Certificate
active
07034354
ABSTRACT:
A semiconductor structure with partially etched gate and method of fabricating the same. A semiconductor structure with a single-sided or dual-sided partially etched gate comprises a gate dielectric layer, a gate conductive layer and a cap layer sequentially stacked on a substrate to form a gate structure, and a lining layer disposed on sidewalls of the gate structure, wherein the lining layer is partially etched to expose the adjacent gate structure. In addition, an inter-layer dielectric layer covers the gate structure and a contact is formed in the inter-layer dielectric layer, exposing the substrate and a portion of the gate structure therein, wherein the lining layer of the exposed portion of the gate structure is partially removed.
REFERENCES:
patent: 6191444 (2001-02-01), Clampitt et al.
patent: 6239011 (2001-05-01), Chen et al.
patent: 6281076 (2001-08-01), Choi et al.
patent: 6348709 (2002-02-01), Graettinger et al.
patent: 6660581 (2003-12-01), Yang et al.
Lee Yueh-Chuan
Tung Ming-Sheng
Birch & Stewart Kolasch & Birch, LLP
Le Dung A.
Promos Technologies Inc.
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