Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Dinh, Son (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
11193725
ABSTRACT:
A lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
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Adams James
Nair Rajesh S.
Quddus Mohammed
Tu Shanghui Larry
Bernstein Allison P.
Dinh Son
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
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