Semiconductor structure with high-voltage sustaining...

Details Semiconductor structure with high-voltage sustaining... Semiconductor structure with high-voltage sustaining...

2007-10-09

2007-10-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

C257SE29063, C257SE21443

Reexamination Certificate

active

11048914

ABSTRACT:
A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A pair of second well regions of a second conductivity type opposite to the first conductivity type are respectively disposed adjacent to the first well region and an anti-punch through region of the first conductivity type is disposed in at least the lower portion of the first well region to increase the doping concentration therein. Due to the ion supplementation of the anti-punch through region, the size of a semiconductor structure can be further reduced without affecting the HV sustaining capability and undesired effects such as punch-through effects can be prevented.

REFERENCES:
patent: 6277675 (2001-08-01), Tung
patent: 6297082 (2001-10-01), Lin et al.
patent: 6455893 (2002-09-01), Gehrmann et al.

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