Semiconductor structure with coincident lattice interlayer

Details Semiconductor structure with coincident lattice interlayer Semiconductor structure with coincident lattice interlayer

2011-06-14

2011-06-14

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S481000, C438S496000, C438S526000, C438S758000, C257S632000

Reexamination Certificate

active

07960259

ABSTRACT:
A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

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