Semiconductor structure sensitive to pressure

Details Semiconductor structure sensitive to pressure Semiconductor structure sensitive to pressure

1977-03-24

1979-02-20

James, Andrew J.

357 16, 357 61, H01L 2984, H01L 2996, H01L 29161

Patent

active

041410254

ABSTRACT:
A semiconductor pressure sensing device comprises a solid made as a AB.sub.1-x C.sub.x semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrically connected to the solid, the semiconductor structure having a first group of layers possessing one value of x and a second group of layers possessing a second value of x and alternating with the layers of the first group.

REFERENCES:
patent: 3200354 (1965-08-01), White
patent: 3270562 (1966-09-01), Ehrenreich
patent: 3369132 (1968-02-01), Fang et al.
patent: 3387230 (1968-06-01), Marinace
patent: 3578864 (1971-05-01), Ross
patent: 3624465 (1971-11-01), Moore
patent: 3740689 (1973-06-01), Yamashita
patent: 3805601 (1974-04-01), Jeffers

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