Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2006-06-27
2006-06-27
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S200000, C257S201000
Reexamination Certificate
active
07067856
ABSTRACT:
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
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Droopad Ravindranath
Eisenbeiser Kurt Williamson
Hilt Lyndee L.
Ramdani Jamal
Booth Richard A.
Freescale Semiconductor Inc.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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