Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-05-19
2010-11-09
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S197000, C438S942000, C257SE21442, C257SE21703
Reexamination Certificate
active
07829447
ABSTRACT:
Forming structures such as fins in a semiconductor layer according to a pattern formed by oxidizing a sidewall of a layer of oxidizable material. In one embodiment, source/drain pattern structures and a fin pattern structures are patterned in the oxidizable layer. The fin pattern structure is then masked from an oxidation process that grows oxide on the sidewalls of the channel pattern structure and the top surface of the source/drain pattern structures. The remaining oxidizable material of the channel pattern structure is subsequently removed leaving a hole between two portions of the oxide layer. These two portions are used in one embodiment as a mask for patterning the semiconductor layer to form two fins. This patterning also leaves the source/drain structures connected to the fins.
REFERENCES:
patent: 5117271 (1992-05-01), Comfort et al.
patent: 5783470 (1998-07-01), Rostoker
patent: 5872031 (1999-02-01), Mishra et al.
patent: 6951784 (2005-10-01), Anderson et al.
patent: 2005/0063215 (2005-03-01), Yang
patent: 2005/0239242 (2005-10-01), Zhu et al.
patent: 2006/0046393 (2006-03-01), Kato
patent: 2006/0084243 (2006-04-01), Zhang et al.
International Search Report from corresponding PCT application dated Oct. 24, 2007.
Luo Tien Ying
Mathew Leo
Mora Rode R.
Stephens Tab A.
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Ghyka Alexander G
Mustapha Abdulfattah
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