Semiconductor structure of a high side driver and method for...

Details Semiconductor structure of a high side driver and method for... Semiconductor structure of a high side driver and method for...

2006-06-26

2010-11-09

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S335000, C257S343000, C257S532000, C257SE21397, C257SE27016, C257SE27048, C257SE29012, C257SE29027, C257SE29256

Reexamination Certificate

active

07829928

ABSTRACT:
A semiconductor structure of a high side driver and method for manufacturing the same is disclosed. The semiconductor of a high side driver includes an ion-doped junction and an isolation layer formed on the ion-doped junction. The ion-doped junction has a number of ion-doped deep wells, and the ion-doped deep wells are separated but partially linked with each other.

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