Semiconductor structure, method for manufacturing...

Details Semiconductor structure, method for manufacturing... Semiconductor structure, method for manufacturing...

2011-04-18

2011-10-18

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S694000, C257SE21597

Reexamination Certificate

active

08039393

ABSTRACT:
A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

REFERENCES:
patent: 2006/0118965 (2006-06-01), Matsui
patent: 2008/0079121 (2008-04-01), Whan
patent: 2009/0014843 (2009-01-01), Kawashita et al.
patent: 2009/0315159 (2009-12-01), Abbott

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