Semiconductor structure incorporating thin film transistors, and

Details Semiconductor structure incorporating thin film transistors, and Semiconductor structure incorporating thin film transistors, and

1997-02-10

2000-02-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438783, H01L 2100

Patent

active

060227664

ABSTRACT:
An improved field effect transistor (FET) structure is disclosed. It comprises a first insulator layer containing at least one primary level stud extending through the layer; an undoped cap oxide layer disposed over the insulator layer and abutting the upper region of each stud; a primary level thin film transistor (TFT) disposed over the undoped cap oxide layer; and a planarized oxide layer disposed over the TFT. Multiple TFT's can be stacked vertically, and connected to other levels of studs and metal interconnection layers. Another embodiment of the invention includes the use of a protective interfacial cap over the surface of tungsten-type studs. The FET structure can serve as a component of a static random access memory (SRAM) cell. Related processes are also disclosed.

REFERENCES:
patent: 5100817 (1992-03-01), Cederbaum et al.
patent: 5112765 (1992-05-01), Cederbaum et al.
patent: 5404030 (1995-04-01), Kim et al.

Affiliated with

Also associated with

Rating

Semiconductor structure incorporating thin film transistors, and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure incorporating thin film transistors, and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure incorporating thin film transistors, and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1680503