Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-11-30
2008-10-07
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000, C257S015000
Reexamination Certificate
active
07432550
ABSTRACT:
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
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Bojarczuk, Jr. Nestor Alexander
Buchanan Douglas Andrew
Guha Supratik
Narayanan Vijay
Ragnarsson Lars-Ake
International Business Machines - Corporation
Luu Chuong A.
McGinn IP Law Group PLLC
Tuchman, Esq. Ido
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