Semiconductor structure including gate electrode having...

Details Semiconductor structure including gate electrode having... Semiconductor structure including gate electrode having...

2011-08-02

2011-08-02

Thomas, Toniae M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21196, C257SE29152, C438S275000

Reexamination Certificate

active

07989900

ABSTRACT:
A semiconductor structure, such as a CMOS structure, includes a gate electrode that has a laterally variable work function. The gate electrode that has the laterally variable work function may be formed using an angled ion implantation method or a sequential layering method. The gate electrode that has the laterally variable work function provides enhanced electrical performance within an undoped channel field effect transistor device.

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