Semiconductor structure including doped silicon carbon liner...

Details Semiconductor structure including doped silicon carbon liner... Semiconductor structure including doped silicon carbon liner...

2007-02-07

2010-02-23

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S374000, C438S303000

Reexamination Certificate

active

07667263

ABSTRACT:
A semiconductor structure and related method for fabrication thereof includes a liner layer interposed between: (1) a pedestal shaped channel region within a semiconductor substrate; and (2) a source region and a drain region within a semiconductor material layer located upon the liner layer and further laterally separated from the pedestal shaped channel region within the semiconductor substrate. The liner layer comprises an active doped silicon carbon material. The semiconductor material layer may comprises a semiconductor material other than a silicon carbon semiconductor material. The semiconductor material layer may alternatively comprise a silicon carbon semiconductor material having an opposite dopant polarity and lower carbon content in comparison with the liner layer. Due to presence of the silicon carbon material, the liner layer inhibits dopant diffusion therefrom into the pedestal shaped channel region. Electrical performance of a field effect device that uses the pedestal shaped channel region is thus enhanced.

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