Semiconductor structure including a conductive fuse and process

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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H01L 2900

Patent

active

060376481

ABSTRACT:
A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication.

REFERENCES:
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5550399 (1996-08-01), Okazaki
patent: 5578517 (1996-11-01), Yoo et al.
patent: 5723358 (1998-03-01), Manley
patent: 5789794 (1998-08-01), Froehner
patent: 5872390 (1999-02-01), Lee et al.

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